The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2020
Filed:
Feb. 03, 2017
Applicant:
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Inventors:
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0312 (2006.01); H01L 23/373 (2006.01); C23C 16/27 (2006.01); C30B 25/18 (2006.01); C23C 16/24 (2006.01); H01L 21/02 (2006.01); C30B 29/68 (2006.01); C30B 29/40 (2006.01); C23C 16/02 (2006.01); C23C 16/50 (2006.01); C23C 14/06 (2006.01); H01L 29/16 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3732 (2013.01); C23C 14/0605 (2013.01); C23C 16/0254 (2013.01); C23C 16/0272 (2013.01); C23C 16/24 (2013.01); C23C 16/27 (2013.01); C23C 16/271 (2013.01); C23C 16/274 (2013.01); C23C 16/50 (2013.01); C30B 25/183 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); C30B 29/68 (2013.01); H01L 21/0243 (2013.01); H01L 21/0245 (2013.01); H01L 21/0262 (2013.01); H01L 21/02444 (2013.01); H01L 21/02458 (2013.01); H01L 21/02488 (2013.01); H01L 21/02494 (2013.01); H01L 21/02502 (2013.01); H01L 21/02513 (2013.01); H01L 21/02527 (2013.01); H01L 21/02595 (2013.01); H01L 21/481 (2013.01); H01L 29/1608 (2013.01);
Abstract
A semiconductor substrate according to the present invention includes a nitride semiconductor layer, an amorphous semiconductor layerformed on one main surface side of the nitride semiconductor layer, a high-roughness layerwhich is a semiconductor layer formed on the amorphous semiconductor layerand has a surface roughness larger than the amorphous semiconductor layer, and a diamond layerformed on the high-roughness layer. Damage to the nitride semiconductor layer can be reduced in forming the diamond layer on the nitride semiconductor layer and adhesion between the layers can be increased.