The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2020

Filed:

Dec. 17, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Kuei-Ming Chang, New Taipei, TW;

Rei-Jay Hsieh, Miaoli County, TW;

Cheng-Han Wu, Hsinchu, TW;

Chie-Iuan Lin, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823878 (2013.01); H01L 21/76232 (2013.01); H01L 21/823481 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01);
Abstract

A device includes a semiconductor fin, a first source/drain feature, a second source/drain feature, and a dielectric plug. The first source/drain feature adjoins the semiconductor fin. The second source/drain feature adjoins the semiconductor fin. The dielectric plug extends from above the semiconductor fin into the semiconductor fin, the dielectric plug is between the first source/drain feature and the second source/drain feature. The dielectric plug includes a waist and a first portion below the waist, and a width of the waist is less than a width of the first portion of the dielectric plug.


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