The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2020
Filed:
Jul. 21, 2017
Hitachi Kokusai Electric Inc., Tokyo, JP;
Kimihiko Nakatani, Toyama, JP;
Hiroshi Ashihara, Toyama, JP;
Hajime Karasawa, Toyama, JP;
Kazuhiro Harada, Toyama, JP;
KOKUSAI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device is provided. The method includes forming a film on a substrate by causing a first precursor and a second precursor to intermittently react with each other by repeating a cycle a plurality of times, the cycle alternately performing supplying the first precursor, which satisfies an octet rule and has a first pyrolysis temperature, to the substrate and supplying the second precursor, which does not satisfy the octet rule and has a second pyrolysis temperature lower than the first pyrolysis temperature, to the substrate. In the act of forming the film, a supply amount of the first precursor is set larger than a supply amount of the second precursor.