The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2020

Filed:

Feb. 08, 2013
Applicant:

Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;

Inventors:

Asuka Honda, Tokyo, JP;

Hiroyuki Shindo, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 15/00 (2006.01); G01N 23/00 (2006.01); H01J 37/02 (2006.01); G03F 7/20 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G01B 15/00 (2013.01); G01N 23/00 (2013.01); G03F 7/70558 (2013.01); G03F 7/70641 (2013.01); H01J 37/02 (2013.01); H01L 22/12 (2013.01);
Abstract

The present invention provides a semiconductor evaluation device for fabricating a suitable reference pattern utilized in comparison tests. The semiconductor evaluation device and computer program extract a process window in a more accurate range based on a two-dimensional evaluation of the pattern. In order to achieve the above described objects, the present invention includes a semiconductor evaluation device that measures the dimensions of the pattern formed over the sample based on a signal obtained by way of a charged particle beam device, selects a pattern whose dimensional measurement results satisfy specified conditions or exposure conditions when the pattern is formed, and forms synthesized contour data, by synthesizing contour data obtained from images of an identically shaped pattern in design data, and also a pattern formed under the selected exposure conditions or a pattern having a positional relation that is already known relative to the selected pattern.


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