The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Dec. 14, 2016
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventor:
Tai-Yuan Wang, New Taipei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7854 (2013.01); H01L 29/1041 (2013.01); H01L 29/42376 (2013.01); H01L 29/66545 (2013.01); H01L 29/7851 (2013.01); H01L 29/165 (2013.01); H01L 29/7848 (2013.01);
Abstract
A semiconductor device includes a plurality of gate spacers, a gate conductor, and first and semiconductor features. The gate conductor is between the gate spacers. The first semiconductor feature underlies the gate conductor and has impurities therein. The second semiconductor feature underlies at least one of the gate spacers and substantially free from the impurities of the first semiconductor feature.
Wang, Tai-Yuan. (2020). Semiconductor device and method of forming doped channel thereof (U.S. Patent No. 10714621). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10714621
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile