The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Jan. 30, 2020
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Youngtag Woo, San Ramon, CA (US);

Hui Zang, Guilderland, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 21/8234 (2006.01); H01L 21/311 (2006.01); H01L 21/3105 (2006.01); H01L 21/3213 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/28079 (2013.01); H01L 21/28088 (2013.01); H01L 21/28194 (2013.01); H01L 21/31144 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/6656 (2013.01); H01L 21/0273 (2013.01); H01L 21/02181 (2013.01); H01L 21/02271 (2013.01); H01L 21/31053 (2013.01); H01L 21/32139 (2013.01);
Abstract

One illustrative transistor device disclosed herein includes a final gate structure that includes a gate insulation layer comprising a high-k material and a conductive gate, wherein the gate structure has an axial length in a direction that corresponds to a gate width direction of the transistor device. The device also includes a sidewall spacer contacting opposing lateral sidewalls of the final gate structure and a pillar structure (comprised of a pillar material) positioned above at least a portion of the final gate structure, wherein, when the pillar structure is viewed in a cross-section taken through the pillar structure in a direction that corresponds to the gate width direction of the transistor device, the pillar structure comprises an outer perimeter and wherein a layer of the high-k material is positioned around the entire outer perimeter of the pillar material.


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