High cutoff frequency metal-insulator-metal capacitors implemented using via contact configurations

Abstract

Devices and methods are provided for fabricating a metal-insulator-metal capacitor within an interconnect structure (e.g., back-end-of-line interconnect structure) to provide capacitive decoupling between positive and negative power supply voltage lines of a power distribution network. Various via contact configurations including interlevel via contacts and truncated via contacts are utilized to connect the metal-insulator-metal capacitor electrodes to power supply voltage lines of the power distribution network to provide an array of high-density, low resistance via contact connections at various locations across the capacitor electrodes to reduce the resistance of the metal-insulator-metal capacitor and, thus, enhance the transient response time and increase the cutoff frequency of the metal-insulator-metal capacitor. The truncated via contacts allow for higher density via contact connections to the capacitor electrodes in regions which have a dense array of wiring of a single polarity, where interlevel via contacts cannot be utilized to provide contacts to the capacitor electrodes.