The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Jun. 26, 2018
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Hiroki Sato, Miyagi, JP;
Hisashi Hirose, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01J 37/32 (2006.01); H01L 21/683 (2006.01); H01L 21/67 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/32449 (2013.01); H01J 37/32513 (2013.01); H01J 37/32568 (2013.01); H01J 37/32724 (2013.01); H01J 37/32853 (2013.01); H01L 21/31116 (2013.01); H01L 21/67109 (2013.01); H01L 21/67248 (2013.01); H01L 21/6831 (2013.01); H01L 21/6833 (2013.01); H01L 21/30655 (2013.01);
Abstract
A shape of a hole can be improved. The plasma etching method includes a recess forming of forming a recess having a depth smaller than a thickness of a silicon oxide film by etching the silicon oxide film by plasma; a removing process of removing a reaction product adhering to the recess by plasma generated from a fluorocarbon gas; and a penetrating process of forming a hole penetrating the silicon oxide film by etching the recess, from which the reaction product is removed, by plasma.