The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Oct. 15, 2019
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Zhuofan Chen, Shanghai, CN;
Haiyang Zhang, Shanghai, CN;
Abstract
A semiconductor structure and a method for forming the same are provided. The method includes: providing a base; forming a to-be-etched material layer on the base; forming a mask material layer on the to-be-etched material layer; performing a first doping treatment on a partial region of the mask material layer, where after the first doping treatment is performed, the mask material layer includes a first mask-material-layer part and a to-be-removed second mask-material-layer part, and the first mask-material-layer part is a part that has undergone the first doping treatment or the second mask-material-layer part is a part that has undergone the first doping treatment; forming a first trench in the mask material layer, where the first trench is at least located in the first mask-material-layer part; removing the second mask-material-layer part, and forming a second trench in the remaining mask material layer; removing the to-be-etched material layer exposed from the first trench and the second trench, and forming a target pattern layer; and after the target pattern layer is formed, removing the remaining mask material layer. By using the present disclosure, the pattern precision of the first trench and the second trench is improved, and the pattern precision in the target pattern layer is correspondingly improved.