The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Mar. 15, 2019
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Mihaela Balseanu, Cupertino, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Mei-Yee Shek, Palo Alto, CA (US);
Ellie Y. Yieh, San Jose, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/66 (2006.01); C23C 16/46 (2006.01); C23C 16/34 (2006.01); C23C 16/36 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02167 (2013.01); C23C 16/345 (2013.01); C23C 16/36 (2013.01); C23C 16/45525 (2013.01); C23C 16/46 (2013.01); H01L 21/0228 (2013.01); H01L 21/02126 (2013.01); H01L 21/02337 (2013.01); H01L 29/66795 (2013.01);
Abstract
A method for forming a thermally stable spacer layer is disclosed. The method includes first disposing a substrate in an internal volume of a processing chamber. The substrate has a film formed thereon, the film including silicon, carbon, nitrogen, and hydrogen. Next, high pressure steam is introduced into the processing chamber. The film is exposed to the high pressure steam to convert the film to reacted film, the reacted film including silicon, carbon, oxygen, and hydrogen.