The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Apr. 26, 2019
Applicant:

Synopsys, Inc., Mountain View, CA (US);

Inventor:

Colin Stewart Bill, Cupertino, CA (US);

Assignee:

Synopsys, Inc., Mountain View, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/34 (2006.01); H04L 9/32 (2006.01); G11C 17/18 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/349 (2013.01); G11C 16/26 (2013.01); G11C 16/3459 (2013.01); G11C 17/18 (2013.01); H04L 9/3278 (2013.01);
Abstract

A physical unclonable function (PUF) circuit generates one or more bit values. The PUF circuit includes a first one-time programmable (OTP) memory cell, a second OTP memory cell, and a latch circuit connected to the first and second OTP memory cells. The latch circuit initiates programming of the first and second OTP memory cells, detects a faster programming OTP memory cell of the first and second OTP memory cells, inhibits programming of a slower programming OTP memory cell of the first and second OTP memory cells, and stores a first bit value when the first OTP memory cell is the faster programming OTP memory cell and a second bit value when the second OTP memory cell is the faster programming OTP memory cell.


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