The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Oct. 17, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Kai-Fung Chang, Taipei, TW;

Lien-Yao Tsai, Hsinchu, TW;

Chien Shih Tsai, Hsinchu County, TW;

Shih-Che Hung, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); G02B 6/124 (2006.01); G02B 6/136 (2006.01);
U.S. Cl.
CPC ...
G02B 6/124 (2013.01); G02B 6/136 (2013.01); G02B 2006/12107 (2013.01);
Abstract

The present disclosure provides a semiconductor device, including a semiconductive substrate, a dielectric stack disposed over the semiconductive substrate to form a wall of a grating coupler opening, and an etch stopper interfacing with two sublayers of the dielectric stack and partially separating the interface of the two sublayers. The etch stopper has a resistance to a fluorine solution that is higher than that of the two sublayers. A method of manufacturing the semiconductor device is also provided.


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