The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2020

Filed:

Jan. 26, 2018
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Thomas Bever, Munich, DE;

Henning Feick, Dresden, DE;

Dirk Offenberg, Dresden, DE;

Stefano Parascandola, Dresden, DE;

Ines Uhlig, Dresden, DE;

Thoralf Kautzsch, Dresden, DE;

Dirk Meinhold, Dresden, DE;

Hanno Melzner, Sauerlach, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); G01S 7/4914 (2020.01); H01L 27/148 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035272 (2013.01); G01S 7/4914 (2013.01); H01L 27/14806 (2013.01);
Abstract

Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.


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