The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2020
Filed:
Jul. 26, 2017
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Kazuya Sato, Nasushiobara, JP;
Hiromasa Hashimoto, Nishigo-mura, JP;
Tsuyoshi Nishizawa, Nishigo-mura, JP;
Hirotaka Horie, Annaka, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
A method for evaluating surface defects of a substrate to be bonded: preparing a mirror-polished silicon single crystal substrate; inspecting surface defects on the mirror-polished silicon single crystal substrate; depositing a polycrystalline silicon layer on a surface of the silicon single crystal substrate subjected to the defect inspection; performing mirror edge polishing to the silicon single crystal substrate having the polycrystalline silicon layer deposited thereon; polishing a surface of the polycrystalline silicon layer; inspecting surface defects on the polished polycrystalline silicon layer; and comparing coordinates of defects detected at the step of inspecting the surface defects on the silicon single crystal substrate with counterparts detected at the step of inspecting the surface defects on the polycrystalline silicone layer and determining quality of the silicon single crystal substrate having the polycrystalline silicon layer as a substrate to be bonded on the basis of presence/absence of defects present at the same position.