The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2020

Filed:

Apr. 07, 2017
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Xiaodong Wang, San Jose, CA (US);

Rongjun Wang, Dublin, CA (US);

Hanbing Wu, Millbrae, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); C23C 14/54 (2006.01); C23C 14/14 (2006.01); C23C 14/08 (2006.01); C23C 14/18 (2006.01); H01J 37/34 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
C23C 14/54 (2013.01); C23C 14/081 (2013.01); C23C 14/14 (2013.01); C23C 14/185 (2013.01); C23C 14/3407 (2013.01); C23C 14/3464 (2013.01); H01J 37/3417 (2013.01); H01J 37/3426 (2013.01); H01J 37/3476 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

Methods and apparatus for reducing defects in a workpiece are provided herein. In some embodiments, a sputter deposition target is provided for reducing defects in a workpiece, the target comprising a dielectric compound having a predefined average grain size ranging from approximately 20 μm to 200 μm. In other embodiments, a process chamber is provided, the process chamber comprising a chamber body defining an interior volume, a substrate support to support a substrate within the interior volume, a plurality of targets to be sputtered onto the substrate including at least one dielectric target, wherein the dielectric target comprises a dielectric compound having a predefined average grain size ranging from approximately 20 μm to 200 μm and a shield rotatably coupled to an upper portion of the chamber body and having at least one hole to expose at least one of the plurality of targets to be sputtered.


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