The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
May. 04, 2018
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Eugene P. Marsh, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 21/02 (2006.01); C23C 16/34 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); C23C 16/345 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02208 (2013.01); H01L 21/02211 (2013.01); H01L 45/1233 (2013.01); H01L 45/141 (2013.01); H01L 45/142 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 45/16 (2013.01); H01L 45/1608 (2013.01);
Abstract
Some embodiments include methods utilizing atomic layer deposition to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses SiIas one precursor and uses a nitrogen-containing material as another precursor. Some embodiments include methods of forming a structure in which a chalcogenide region is formed over a semiconductor substrate; and in which SiIis used as a precursor during formation of silicon nitride material directly against a surface of the chalcogenide region.