The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
May. 06, 2019
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chao-Ching Cheng, Hsinchu, TW;
Chen-Feng Hsu, Hsinchu, TW;
Yu-Lin Yang, Hsinchu County, TW;
Jung-Piao Chiu, Kaohsiung, TW;
Tzu-Chiang Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor structure includes receiving a substrate including a dielectric structure; forming a first recess in the substrate; forming a dielectric spacer over a sidewall of the first recess; forming a first semiconductor layer to fill the first recess; removing the dielectric structure to form a second recess over the substrate; and forming a second semiconductor layer to fill the second recess. The dielectric spacer is sandwiched between the first semiconductor layer and the second semiconductor layer.