The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
May. 14, 2018
Infineon Technologies Ag, Neubiberg, DE;
Thomas Aichinger, Faak am See, AT;
Wolfgang Bergner, Klagenfurt, AT;
Romain Esteve, Munich, DE;
Daniel Kueck, Villach, AT;
Dethard Peters, Hoechstadt, DE;
Ralf Siemieniec, Villach, AT;
Bernd Zippelius, Erlangen, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
By using at least one of a processor device and model transistor cells, a set of design parameters for at least one of a transistor cell and a drift structure of a wide band-gap semiconductor device is determined, wherein an on state failure-in-time rate and an off state failure-in-time rate of a gate dielectric of the transistor cell are within a same order of magnitude for a predefined on-state gate-to-source voltage, a predefined off-state gate-to-source voltage, and a predefined off-state drain-to-source voltage.