The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
May. 09, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Wei-Han Huang, Taipei, TW;
Wen-Yen Chen, Hsinchu, TW;
Jing-Huei Huang, Yuanshan Township, Yilan County, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A FinFET device structure and method for forming the same are provided. The method includes forming a fin structure over a substrate and forming a dummy gate electrode over a middle portion of the fin structure. The method also includes forming a spacer layer on the dummy gate electrode and on the fin structure and performing a plasma doping process on the dummy gate electrode and on the spacer layer. The method further includes performing an annealing process, wherein the annealing process is performed by using a gas comprising oxygen, such that a doped region is formed in a portion of the fin structure, and the spacer layer is doped with oxygen after the annealing process.