The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
Oct. 24, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chia-Hao Chang, Hsinchu, TW;
Ming-Shan Shieh, Hsinchu, TW;
Cheng-Long Chen, Hsinchu, TW;
Chin-Chi Wang, New Taipei, TW;
Chi-Wen Liu, Hsinchu, TW;
Wai-Yi Lien, Hsinchu, TW;
Chih-Hao Wang, Baoshan Township, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); B82Y 10/00 (2011.01); H01L 29/04 (2006.01); H01L 29/417 (2006.01); H01L 29/775 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42392 (2013.01); B82Y 10/00 (2013.01); H01L 21/823807 (2013.01); H01L 21/823885 (2013.01); H01L 29/045 (2013.01); H01L 29/0676 (2013.01); H01L 29/0847 (2013.01); H01L 29/41741 (2013.01); H01L 29/6656 (2013.01); H01L 29/66439 (2013.01); H01L 29/66666 (2013.01); H01L 29/775 (2013.01); H01L 29/7827 (2013.01);
Abstract
Vertical gate all around (VGAA) devices and methods of manufacture thereof are described. A method for manufacturing a VGAA device includes: exposing a top surface and sidewalls of a first portion of a protrusion extending from a doped region, wherein a second portion of the protrusion is surrounded by a gate stack; and enlarging the first portion of the protrusion using an epitaxial growth process.