The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2020

Filed:

Oct. 04, 2018
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Xinhai Han, Santa Clara, CA (US);

Deenesh Padhi, Sunnyvale, CA (US);

Er-Xuan Ping, Fremont, CA (US);

Srinivas Guggilla, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 27/11582 (2017.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/02164 (2013.01); H01L 21/31116 (2013.01); H01L 27/1157 (2013.01);
Abstract

Embodiments described herein relate to methods and materials for fabricating semiconductor devices, such as memory devices and the like. In one embodiment, a memory layer stack includes materials having differing etch rates in which one material is selectively removed to form an airgap in the device structure. In another embodiment, silicon containing materials of a memory layer stack are doped or fabricated as a silicide material. In another embodiment, a silicon nitride material is utilized as an interfacial layer between oxide containing and silicon containing layers of a memory layer stack.


Find Patent Forward Citations

Loading…