The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
Sep. 25, 2017
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Hiroaki Kawasaki, Yamanashi, JP;
Takashi Matsumoto, Yamanashi, JP;
Hiroyuki Nagai, Yamanashi, JP;
Ryota Ifuku, Yamanashi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 21/321 (2006.01); C23C 16/56 (2006.01); C23C 16/04 (2006.01); C23C 16/18 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53209 (2013.01); C23C 16/045 (2013.01); C23C 16/18 (2013.01); C23C 16/56 (2013.01); H01L 21/28556 (2013.01); H01L 21/28562 (2013.01); H01L 21/28568 (2013.01); H01L 21/321 (2013.01); H01L 21/3212 (2013.01); H01L 21/32115 (2013.01); H01L 21/7684 (2013.01); H01L 21/76814 (2013.01); H01L 21/76843 (2013.01); H01L 21/76879 (2013.01); H01L 21/76882 (2013.01);
Abstract
There is provided a method for manufacturing Ni wiring. The method includes forming an Ni film on a surface of a substrate having a recess formed thereon by CVD or ALD by using an Ni compound as a film forming material and NHgas and Hgas as reduction gases to partially fill the recess. The method further includes annealing the substrate to make the Ni film on the surface of the substrate and on a side surface of the recess reflow into the recess.