The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
Aug. 31, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tsung-Han Tsai, Zhunan Township, Miaoli County, TW;
Po-Jen Wang, Taichung, TW;
Chun-Li Wu, Tainan, TW;
Ching-Hung Kao, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a substrate. The substrate includes a first semiconductor layer, a second semiconductor layer, and an insulating layer between the first semiconductor layer and the second semiconductor layer. The semiconductor device structure also includes a gate stack over the substrate. The semiconductor device structure further includes source and drain structures in the second semiconductor layer of the substrate. The source and drain structures are on opposite sides of the gate stack. In addition, the semiconductor device structure includes a first isolation feature in the substrate. The first isolation feature includes an insulation material and surrounds the source and drain structures. The semiconductor device structure also includes a second isolation feature in the first isolation feature. The second isolation feature includes a metal material and surrounds the source and drain structures.