The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
Apr. 09, 2019
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Wonwoo Kim, Malta, NY (US);
Praneet Adusumilli, Albany, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 23/485 (2006.01); H01L 21/285 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76889 (2013.01); H01L 21/28518 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76858 (2013.01); H01L 21/76876 (2013.01); H01L 21/76895 (2013.01); H01L 23/485 (2013.01); H01L 23/535 (2013.01); H01L 21/28556 (2013.01); H01L 23/53209 (2013.01);
Abstract
A cobalt contact includes a dual silicide barrier layer. The barrier layer, which may be formed in situ, includes silicides of titanium and cobalt, and provides an effective adhesion layer between the cobalt contact and a conductive device region such as the source/drain junction of a semiconductor device, eliminating void formation during a metal anneal.