The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
Apr. 24, 2018
Globalfoundries Inc., Grand Cayman, KY;
Ruilong Xie, Niskayuna, NY (US);
Chanro Park, Clifton Park, NY (US);
Daniel Chanemougame, Niskayuna, NY (US);
Steven Soss, Cornwall, NY (US);
Lars Liebmann, Mechanicville, NY (US);
Hui Zang, Guilderland, NY (US);
Shesh Mani Pandey, Saratoga Springs, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Methods and structures that include a vertical-transport field-effect transistor. First and second semiconductor fins are formed that project vertically from a bottom source/drain region. A first gate stack section is arranged to wrap around a portion of the first semiconductor fin, and a second gate stack section is arranged to wrap around a portion of the second semiconductor fin. The first gate stack section is covered with a placeholder structure. After covering the first gate stack section with the placeholder structure, a metal gate capping layer is deposited on the second gate stack section. After depositing the metal gate capping layer on the second gate stack section, the placeholder structure is replaced with a contact that is connected with the first gate stack section.