The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
May. 26, 2016
Applicant:
Sunedison Semiconductor Limited, Singapore, SG;
Inventors:
Guoqiang David Zhang, Ballwin, MO (US);
Mark Crooks, Inmann, SC (US);
Tracy Michelle Ragan, Warrenton, MO (US);
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/321 (2006.01); H01L 21/306 (2006.01); H01L 21/304 (2006.01); H01L 21/02 (2006.01); B24B 53/017 (2012.01);
U.S. Cl.
CPC ...
H01L 21/30625 (2013.01); B24B 53/017 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/304 (2013.01); H01L 21/3212 (2013.01); H01L 22/20 (2013.01); H01L 22/12 (2013.01);
Abstract
A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer. The silicon layer has a substantially uniform thickness. The silicon layer is polished to smooth the silicon layer such that the thickness is substantially uniform after polishing.