The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
Jan. 25, 2019
Ricoh Company, Ltd., Tokyo, JP;
Ryoichi Saotome, Kanagawa, JP;
Naoyuki Ueda, Kanagawa, JP;
Yuki Nakamura, Tokyo, JP;
Yukiko Abe, Kanagawa, JP;
Shinji Matsumoto, Kanagawa, JP;
Yuji Sone, Kanagawa, JP;
Sadanori Arae, Kanagawa, JP;
Minehide Kusayanagi, Kanagawa, JP;
RICOH COMPANY, LTD., Tokyo, JP;
Abstract
A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; a semiconductor layer, which is disposed to be adjacent to the source electrode and the drain electrode; and a gate insulating layer, which is disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes a first gate insulating layer containing a first oxide containing Si and an alkaline earth metal and a second gate insulating layer disposed to be in contact with the first gate insulating layer and containing a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid.