The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2020

Filed:

Nov. 21, 2017
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Stephan Pindl, Ergoldsbach, DE;

Daniel Porwol, Straubing, DE;

Johann Strasser, Schierling, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/17 (2006.01); H05B 3/00 (2006.01); G02B 5/20 (2006.01); G02B 5/26 (2006.01);
U.S. Cl.
CPC ...
H05B 3/009 (2013.01); G01N 21/1702 (2013.01); G02B 5/208 (2013.01); G02B 5/26 (2013.01); G01N 2021/1704 (2013.01); H05B 2203/017 (2013.01);
Abstract

A method for producing an infrared emitter arrangement is provided. The method includes providing a carrier. The carrier includes at least one infrared emitter structure at a first side of the carrier and at least one cutout at a second side of the carrier, said second side being situated opposite the first side of the carrier, wherein the at least one cutout extends from the second side of the carrier in the direction of the at least one infrared emitter structure. The method further includes securing an infrared filter layer structure at the second side of the carrier in such a way that the at least one cutout separates the at least one infrared emitter structure from the infrared filter layer structure.


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