The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Nov. 28, 2018
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Andrew J. Hansen, Boise, ID (US);
James A. Cultra, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/102 (2006.01); H01L 21/768 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 45/12 (2013.01); H01L 21/76834 (2013.01); H01L 27/1026 (2013.01); H01L 27/2409 (2013.01); H01L 27/2427 (2013.01); H01L 27/2463 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01L 45/065 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/16 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01); H01L 45/06 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01);
Abstract
A semiconductor device includes memory cells, a first dielectric liner material overlying side surfaces of the memory cells, a high-k dielectric material overlying side surfaces of the first dielectric liner material, a second dielectric liner material overlying side surfaces of the high-k dielectric material, and an additional dielectric material overlying side surfaces of the second dielectric liner material. A memory structure, an electronic system, and a method of forming a memory structure are also described.