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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10693056 B1

PDFFull Text
Date of Patent:
Jun. 23, 2020

Filed:

Aug. 14, 2018

Three-dimensional (3d) magnetic memory device comprising a magnetic tunnel junction (mtj) having a metallic buffer layer

Applicant:

Spin Memory, Inc., Fremont, CA (US);

Inventors:

Marcin Gajek, Berkeley, CA (US);

Michail Tzoufras, Sunnyvale, CA (US);

Assignee:

SPIN MEMORY, INC., Wilmington, DE (US);

Attorney:

Morgan, Lewis & Bockius LLP

Primary Examiner:

Younes Boulghassoul

Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/08 (2006.01); G11C 11/16 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); H01L 43/04 (2006.01); H01L 43/14 (2006.01);
U.S. Cl.
CPC ...
H01L 43/04 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01); H01L 43/14 (2013.01); G11C 11/161 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

A magnetic memory device is provided. The magnetic memory device includes: (i) a cylindrical core, (ii) a metallic buffer layer that surrounds the cylindrical core, (iii) a first ferromagnetic layer that surrounds the metallic buffer layer, (iv) a barrier layer that surrounds the first ferromagnetic layer, and (v) a second ferromagnetic layer that surrounds the barrier layer. The cylindrical core, the metallic buffer layer, the first ferromagnetic layer, the barrier layer, and the second ferromagnetic layer collectively form a magnetic tunnel junction.

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Quick Actions:

Gajek, Marcin. (2020). Three-dimensional (3d) magnetic memory device comprising a magnetic tunnel junction (mtj) having a metallic buffer layer (U.S. Patent No. 10693056). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10693056

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