The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2020

Filed:

Nov. 08, 2018
Applicant:

Enkris Semiconductor, Inc., Suzhou, CN;

Inventors:

Peng Xiang, Suzhou, CN;

Kai Cheng, Suzhou, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/161 (2006.01); H01L 29/20 (2006.01); H01L 23/00 (2006.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01); H01L 33/34 (2010.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/0242 (2013.01); H01L 21/0245 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 21/02452 (2013.01); H01L 21/02458 (2013.01); H01L 21/02477 (2013.01); H01L 29/2003 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01); H01L 33/34 (2013.01);
Abstract

The present invention discloses a semiconductor structure and a method for manufacturing the semiconductor structure. The semiconductor structure includes: a substrate; and at least one composition adjusting layer disposed above the substrate; wherein each of the at least one composition adjusting layer is made of a semiconductor compound, the semiconductor compound at least comprises a first element and a second element, and an atomic number of the first element is less than an atomic number of the second element, wherein in each of the at least one composition adjusting layer, along an epitaxial direction of the substrate, an atomic percentage of the first element in a compound composition is gradually decreased at first and then gradually increased, a thickness of a gradual decrease section is greater than a thickness of a gradual increase section.


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