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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10692757 B1

PDFFull Text
Date of Patent:
Jun. 23, 2020

Filed:

May. 28, 2015

Means to decouple the diffusion and solubility switch mechanisms of photoresists

Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Marie Krysak, Portland, OR (US);

Robert Lindsey Bristol, Portland, OR (US);

Paul Anton Nyhus, Portland, OR (US);

Michael J. Leeson, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:

Schwabe, Williamson & Wyatt, P.C.

Primary Examiner:

Amanda C Walke

Int. Cl.
CPC ...
G03F 7/004 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01); G03F 7/20 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/095 (2006.01); C08F 212/32 (2006.01); C08F 212/14 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); C08F 212/14 (2013.01); C08F 212/32 (2013.01); G03F 7/0045 (2013.01); G03F 7/0382 (2013.01); G03F 7/0392 (2013.01); G03F 7/095 (2013.01); G03F 7/2002 (2013.01); G03F 7/2004 (2013.01); G03F 7/2022 (2013.01); G03F 7/32 (2013.01); G03F 7/38 (2013.01); H01L 21/0271 (2013.01); H01L 21/0274 (2013.01); H01L 21/31144 (2013.01); H01L 21/76808 (2013.01); H01L 21/76897 (2013.01); H01L 23/49827 (2013.01);
Abstract

Embodiments of the invention include photoresist materials and methods of patterning photoresist materials. In an embodiment a photoresist material comprises a plurality of molecular glasses (MGs). In an embodiment, a glass transition temperature Tg of the photoresist material is less than an activation temperature needed to deblock blocking groups from the MGs. Embodiments include a method of patterning a photoresist material that comprises exposing the photoresist material with ultraviolet radiation. The method may also comprise, performing a first post exposure bake at a first temperature, that is less than the activation temperature needed to deblock blocking groups from the MGs, and performing a second post exposure bake at a second temperature that is approximately equal to or greater than the activation temperature needed to deblock blocking groups from the MGs.

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