The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2020

Filed:

Feb. 13, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Vipul Patel, Santa Clara, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/26 (2006.01); G11C 16/10 (2006.01); G11C 16/30 (2006.01); G11C 16/08 (2006.01); G11C 16/28 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/28 (2013.01); G11C 16/30 (2013.01);
Abstract

Methods of operating a memory include reading a particular grouping of memory cells using a read voltage having a particular voltage level, determining a number of memory cells of a subset of memory cells of the particular grouping of memory cells having a particular data state, and, if the number of memory cells of the subset of memory cells having the particular data state is less than a particular threshold, adjusting a voltage level of the read voltage in response to the number of memory cells of the subset of memory cells having the particular data state and reading the particular grouping of memory cells using the read voltage having the adjusted voltage level.


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