The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2020

Filed:

Jul. 06, 2018
Applicant:

Spin Memory, Inc., Fremont, CA (US);

Inventors:

Michail Tzoufras, Sunnyvale, CA (US);

Marcin Gajek, Berkeley, CA (US);

Kadriye Deniz Bozdag, Sunnyvale, CA (US);

Mourad El Baraji, Freemont, CA (US);

Assignee:

Spin Memory, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); H03K 17/30 (2006.01); G11C 11/16 (2006.01); H03K 19/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5607 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H03K 17/30 (2013.01); H03K 19/0002 (2013.01); G11C 2211/563 (2013.01); G11C 2211/5615 (2013.01);
Abstract

Techniques for reading a Multi-Bit Cell (MBC) can include sensing a state parameter value, such as source line voltage, and applying a successive one of N programming parameter values, such as successive programming currents, between instances of sensing the state parameter values. The N successive programming parameter values can be selected to switch the state of a corresponding one of N cell elements of the MBC. Successive ones of the sensed state parameter values can be compared to determine N state change results, which can be used to determine the read state of the MBC.


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