The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Sep. 22, 2017
Mitsubishi Gas Chemical Company, Inc., Chiyoda-ku, JP;
Akinobu Horita, Tokyo, JP;
Kenji Shimada, Tokyo, JP;
Kenichi Takahashi, Tokyo, JP;
Toshiyuki Oie, Tokyo, JP;
Aya Ito, Tokyo, JP;
MITSUBISHI GAS CHEMICAL COMPANY, INC., Chiyoda-ku, JP;
Abstract
The present invention relates to a wet etching composition for a substrate having a SiN layer and a Si layer, comprising 0.1-50 mass % fluorine compound (A), 0.04-10 mass % oxidant (B) and water (D) and having pH in a range of 2.0-5.0. The present invention also relates to a wet etching process for a semiconductor substrate having a SiN layer and a Si layer, the process using the wet etching composition. The composition of the present invention can be used for a substrate having a SiN layer and a Si layer to enhance removal selectivity of Si over SiN while reducing corrosion of the device and the exhaust line and air pollution caused by a volatile component generated upon use and further a burden on the environment caused by the nitrogen content contained in the composition.