The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2020
Filed:
Nov. 09, 2018
Applied Materials, Inc., Santa Clara, CA (US);
Min Gyu Sung, Essex, MA (US);
Jae Young Lee, Bedford, MA (US);
Johannes Van Meer, Middleton, MA (US);
Sony Varghese, Manchester, MA (US);
Naushad K. Variam, Marblehead, MA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Disclosed are methods of forming a semiconductor device, such as a finFET device. One non-limiting method may include providing a semiconductor device including a substrate and a plurality of fins extending from the substrate, and forming a source trench isolation (STI) material over the semiconductor device. The method may further include performing a fin cut by removing a first fin section of the plurality of fins and a first portion of the STI material, and forming a second STI material over a second fin section of the plurality of fins, wherein the second fin section is left remaining following removal of the first fin section. The method may further include recessing the STI material and the second STI material, forming a spin-on-carbon (SOC) layer over the semiconductor device, and implanting the STI material and the second STI material through the SOC layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile