The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2020

Filed:

Mar. 01, 2018
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventor:

Zhi-Biao Zhou, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 27/22 (2006.01); H01L 29/786 (2006.01); H01L 27/11502 (2017.01);
U.S. Cl.
CPC ...
H01L 27/2436 (2013.01); H01L 27/11502 (2013.01); H01L 27/228 (2013.01); H01L 29/7869 (2013.01);
Abstract

A semiconductor device integrated with memory device includes a substrate, having a first side and a second side. A transistor circuit layer is disposed over the substrate at the first side. An interconnect structure layer is disposed over the transistor circuit layer with electric connection to form a circuit route. A memory cell layer is disposed over the interconnect structure layer or over a second side of the substrate, in connection to the circuit route. The memory cell layer includes a plurality of memory cells, and a cell structure of the memory cells includes an oxide semiconductor field effect transistor and a memory element.


Find Patent Forward Citations

Zhou, Zhi-Biao. (2020). Semiconductor device integrated with memory device and fabrication method thereof (U.S. Patent No. 10686011). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10686011

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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