The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2020
Filed:
Apr. 02, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823456 (2013.01); H01L 21/823412 (2013.01); H01L 27/088 (2013.01); H01L 29/0607 (2013.01); H01L 29/66545 (2013.01); H01L 29/66621 (2013.01); H01L 29/49 (2013.01); H01L 29/517 (2013.01);
Abstract
A semiconductor device includes a substrate, an isolation structure, and a gate structure. The substrate has an active area. The isolation structure surrounds the active area of the substrate. The gate structure is across the active area of the substrate. The isolation structure has a first portion under the gate structure and a second portion adjacent to the gate structure. A top surface of the first portion of the isolation structure is lower than a top surface of the second portion of the isolation structure.