The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2020
Filed:
Dec. 14, 2018
Globalfoundries Inc., Grand Cayman, KY;
Ruilong Xie, Niskayuna, NY (US);
Hui Zang, Guilderland, NY (US);
Lei Sun, Altamont, NY (US);
Lars Liebmann, Mechanicville, NY (US);
Daniel Chanemougame, Niskayuna, NY (US);
Guillaume Bouche, Albany, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Methods for forming a cut between interconnects and structures with cuts between interconnects. A layer is patterned to form first, second, and third features having a substantially parallel alignment with the second feature between the first feature and the third feature. A sacrificial layer is formed that is arranged between the first and second features and between the second and third features. The sacrificial layer is patterned to form a cut between the first and second features from which a portion of the sacrificial layer is fully removed and to form a cavity in a portion of the sacrificial layer between the second and third features. A dielectric layer is formed inside the cut between the first and second features. After depositing the section of the dielectric material and forming the dielectric layer, the sacrificial layer is removed.