The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2020
Filed:
Nov. 11, 2016
Tokyo Electron Limited, Tokyo, JP;
Yoshihiro Umezawa, Miyagi, JP;
Jun Sato, Miyagi, JP;
Kiyoshi Maeda, Miyagi, JP;
Mitsunori Ohata, Miyagi, JP;
Kazuya Matsumoto, Miyagi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A method MT includes etching a wafer W using plasma generated in a processing container. The etching includes a process of inclining and rotating a holding structure holding the wafer W during execution of the etching and the process successively creating a plurality of inclined rotation states RT(φ, t) with respect to the holding structure. In the inclined rotation states, the wafer W is rotated about a central axis of the wafer W over a predetermined process time while maintaining a state where the central axis is inclined with respect to a reference axis of the processing container which is in the same plane as the central axis. A combination of a value φ of an inclination angle AN of the central axis with respect to the reference axis and the process time t differs for each of the plurality of inclined rotation states.