The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2020

Filed:

Apr. 11, 2019
Applicant:

Yield Microelectronics Corp., Chu-Pei, TW;

Inventors:

Hsin-Chang Lin, Chu-Pei, TW;

Cheng-Yu Chung, Chu-Pei, TW;

Wen-Chien Huang, Chu-Pei, TW;

Assignee:

YIELD MICROELECTRONICS CORP., Chu-Pei, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/16 (2006.01); H03K 19/094 (2006.01); G11C 16/08 (2006.01); H01L 27/115 (2017.01); G11C 16/34 (2006.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/16 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/14 (2013.01); G11C 16/344 (2013.01); H01L 27/115 (2013.01); H03K 19/094 (2013.01);
Abstract

A method of fast erasing a low-current EEPROM array. The EEPROM array comprises bit line groups, word lines, common source lines, and sub-memory arrays. Each sub-memory array includes a first memory cell and a second memory cell. The first memory cell is connected with one bit line of a first bit line group, a first common source line, and a first word line. The second memory cell is connected with the other bit line of the first bit line group, the first common source line, and a second word line. The first and second memory cells are operation memory cells and symmetrically arranged at two sides of the first common source line. The source or the drain is floated during erasing to perform the fast bytes-erasing with low current, low voltage and low cost.


Find Patent Forward Citations

Loading…