The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2020

Filed:

Aug. 31, 2018
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Chika Tanaka, Fujisawa Kanagawa, JP;

Masumi Saitoh, Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/21 (2006.01); G11C 14/00 (2006.01); H01L 27/11502 (2017.01);
U.S. Cl.
CPC ...
G11C 14/0072 (2013.01); G11C 11/21 (2013.01); H01L 27/11502 (2013.01);
Abstract

A semiconductor memory includes a first and a second transistor each with one of source/drain connected to a first wiring. The other of the source/drain for each of first and second transistor is connected to the gate of the other transistor. A third and a fourth transistor each have gates connected to a second wiring, one of source/drain of each connected to a third or fifth wiring, the other of the source/drain connected to the other of the source/drain of the first or second transistor. For the third transistor, a gate insulation layer includes a first ferroelectric material. For the fourth transistor, and a gate insulation layer includes a second ferroelectric material.


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