The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2020
Filed:
Jul. 13, 2017
Applicant:
Sicoxs Corporation, Tokyo, JP;
Inventors:
Ko Imaoka, Kariya, JP;
Takanori Murasaki, Kariya, JP;
Toshihisa Shimo, Kariya, JP;
Hidetsugu Uchida, Tokyo, JP;
Akiyuki Minami, Tokyo, JP;
Assignee:
SICOXS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 29/04 (2013.01);
Abstract
A technique related to a bonded semiconductor substrate capable of reducing an interface resistance is provided. The semiconductor substrate comprises a single-crystalline SiC substrate and a polycrystalline SiC substrate. The single-crystalline SIC substrate and the polycrystalline SiC substrate are bonded. A bonded region of the single-crystalline SiC substrate and the polycrystalline SiC substrate contains 1×10(atoms/cm) or more of particular atoms.