The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2020

Filed:

Dec. 26, 2018
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Bhaskar Srinivasan, Allen, TX (US);

Brian Goodlin, Plano, TX (US);

Dhishan Kande, Dallas, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 49/02 (2006.01); H01L 21/70 (2006.01); H01L 21/66 (2006.01); H01C 17/24 (2006.01); H01L 21/822 (2006.01); H01C 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01C 7/006 (2013.01); H01C 17/2404 (2013.01); H01L 21/707 (2013.01); H01L 21/822 (2013.01); H01L 22/14 (2013.01);
Abstract

A method of fabricating an integrated circuit (IC) includes providing a substrate having a semiconductor surface layer comprising an unpatterned resistive layer. Measurements are obtained of a characteristic of the unpatterned resistive layer at each of a plurality of locations over the substrate. The unpatterned resistive layer is modified, such as by targeted removal of layer material, in response to the measurements such that the measured characteristic is more uniform across the substrate. A resistor on the IC is defined from the unpatterned resistive layer after the modifying.


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