The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2020

Filed:

Sep. 04, 2018
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Yu-Cheng Lin, Tainan, TW;

Chich-Neng Chang, Pingtung County, TW;

Bin-Siang Tsai, Changhua County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/76825 (2013.01); H01L 21/76828 (2013.01); H01L 21/76834 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01);
Abstract

An interconnection structure and method of forming the same are disclosed. A substrate is provided. A patterned layer is formed on the substrate and having at least a trench formed therein. A first dielectric layer is then formed on the patterned layer and sealing an air gap in the trench. Subsequently, a second dielectric layer is formed on the first dielectric layer and completely covering the patterned layer and the air gap. A curing process is then performed to the first dielectric layer and the second dielectric layer. A volume of the air gap is increased after the curing process.


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