The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2020

Filed:

Jul. 27, 2018
Applicant:

Screen Holdings Co., Ltd., Kyoto-shi, Kyoto, JP;

Inventors:

Mao Omori, Kyoto, JP;

Katsuichi Akiyoshi, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/687 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67115 (2013.01); H01L 21/02345 (2013.01); H01L 21/67017 (2013.01); H01L 21/67253 (2013.01); H01L 21/6875 (2013.01); H01L 21/68707 (2013.01); H01L 21/68785 (2013.01);
Abstract

Pressure in a chamber receiving a semiconductor wafer is reduced to a level less than atmospheric pressure. The semiconductor wafer is subjected to heat treatment in a reduced-pressure atmosphere by being irradiated with a flash of light. A leak determination part determines that a leak occurs at the chamber if pressure in the chamber does not reach target pressure while a time period passed since start of reduction of pressure in the chamber exceeds a threshold set in advance. A leak at the chamber is detected by monitoring a time period passed since start of reduction of pressure in the chamber. This makes it possible to determine the presence or absence of a leak at the chamber with a simple structure without requiring installation of a new hardware structure.


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