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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10679860 B1

PDFFull Text
Date of Patent:
Jun. 09, 2020

Filed:

Mar. 09, 2016

Self-aligning source, drain and gate process for iii-v nitride mishemts

Applicant:

Agency for Science, Technology and Research, Singapore, SG;

Inventors:

Lakshmi Kanta Bera, Singapore, SG;

Yee Chong Loke, Singapore, SG;

Surani Bin Dolmanan, Singapore, SG;

Sudhiranjan Tripathy, Singapore, SG;

Wai Hoe Tham, Singapore, SG;

Assignee:

AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH, Singapore, SG;

Attorneys:

Brian E. Reese

Dana M. Daukss

Choate, Hall & Stewart LLP

Primary Examiner:

Jae Lee

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 29/51 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 21/28 (2006.01); H01L 29/205 (2006.01); H01L 29/40 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28575 (2013.01); H01L 21/28264 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/404 (2013.01); H01L 29/452 (2013.01); H01L 29/4958 (2013.01); H01L 29/517 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01);
Abstract

A method for fabrication of high electron mobility transistor (HEMT) semiconductor devices is presented. The method includes providing a substrate, growing a HEMT layer structure on the substrate; and self-aligned common metal stack formation of source, drain and gate electrodes on the HEMT layer structure using a single lithographic mask.

Find Patent Forward Citations

Bera, Lakshmi. (2020). Self-aligning source, drain and gate process for iii-v nitride mishemts (U.S. Patent No. 10679860). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10679860

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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