The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2020

Filed:

Oct. 19, 2017
Applicant:

Sumco Corporation, Tokyo, JP;

Inventors:

Noritomo Mitsugi, Saga, JP;

Kazutaka Eriguchi, Saga, JP;

Shuichi Samata, Saga, JP;

Ayumi Masada, Saga, JP;

Assignee:

SUMCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/16 (2006.01); C30B 29/06 (2006.01); H01L 21/66 (2006.01); G01R 31/26 (2020.01); C30B 25/20 (2006.01);
U.S. Cl.
CPC ...
C30B 25/16 (2013.01); C30B 25/20 (2013.01); C30B 29/06 (2013.01); G01R 31/2648 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01);
Abstract

The method is a method of evaluating a manufacturing process of a silicon material, wherein the manufacturing process includes a process that uses a member containing a carbon-containing sintered body, and the method of evaluating the manufacturing process of a silicon material includes performing DLTS measurement on a silicon material manufactured in the manufacturing process, and estimating a heavy metal contamination source of a silicon material manufactured in the manufacturing process with an indicator in the form of presence/absence of detection of a peak of a carbon-related level and presence/absence of detection of a peak of a heavy metal-related level in a DLTS spectrum obtained by the DLTS measurement.


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