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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10672914 B1

PDFFull Text
Date of Patent:
Jun. 02, 2020

Filed:

Jul. 25, 2014

Field-effect transistor and method for producing field-effect transistor

Applicant:

Ricoh Company, Ltd., Tokyo, JP;

Inventors:

Shinji Matsumoto, Kanagawa, JP;

Naoyuki Ueda, Kanagawa, JP;

Yuki Nakamura, Tokyo, JP;

Mikiko Takada, Kanagawa, JP;

Yuji Sone, Kanagawa, JP;

Ryoichi Saotome, Kanagawa, JP;

Sadanori Arae, Kanagawa, JP;

Yukiko Abe, Kanagawa, JP;

Assignee:

Ricoh Company, Ltd., Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Amare Mengistu

Assistant Examiner:

Jennifer L Zubajlo

Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); G09G 3/20 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); G09G 3/2092 (2013.01); H01L 27/1225 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/45 (2013.01); H01L 29/4908 (2013.01); H01L 29/66969 (2013.01); H01L 29/78696 (2013.01);
Abstract

To provide a field-effect transistor, containing: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, both of which are configured to take out electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein work function of the source electrode and drain electrode is 4.90 eV or greater, and wherein an electron carrier density of the n-type oxide semiconductor is 4.0×10cmor greater.

Find Patent Forward Citations

Matsumoto, Shinji. (2020). Field-effect transistor and method for producing field-effect transistor (U.S. Patent No. 10672914). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10672914

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