The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Mar. 26, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Yueh-Chuan Lee, Hsinchu, TW;
Chia-Chan Chen, Zhubei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2012.01); H01L 27/146 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14612 (2013.01); H01L 21/0257 (2013.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/14689 (2013.01); H01L 29/0638 (2013.01);
Abstract
In some embodiments, the present disclosure relates to an integrated chip having a photodetector arranged within a semiconductor substrate having a first doping type. One or more dielectric materials are disposed within a trench defined by interior surfaces of the semiconductor substrate. A doped epitaxial material arranged within the trench at a location laterally between the one or more dielectric materials and the photodetector. The doped epitaxial material has a second doping type that is different than the first doping type.